Heterostructure Intervalley Transferred Electron Effects
XUE Fang-Shi
National Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Nanjing Electronic Devices Institute, Nanjing 210016 (mailing address)
Heterostructure Intervalley Transferred Electron Effects
XUE Fang-Shi
National Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Nanjing Electronic Devices Institute, Nanjing 210016 (mailing address)
Abstract： A Gunn active layer is used as an X electron probe to detect the X tunnelling current in the GaAs--AlAs heterostructure, from which a new heterostructure intervalley transferred electron (HITE) device is obtained. In the 8 mm band, the highest pulse output power of these diodes is 2.65 W and the highest conversion efficiency is 18%. The dc and rf performance of the HITE devices was simulated by the band mixing resonant tunnelling theory and Monte Carlo transport simulation. The HITE effect has transformed the transit-time dipole-layer mode in the Gunn diode into a relaxation oscillation mode in the HITE device. From the comparison of simulated results to the measured data, the HITE effect is demonstrated straightforwardly.
2001, Vol. 18 
