Binding Energy of Excitons Bound to Neutral Donors in Two-Dimensional Semiconductors
LIU Jian-jun1,2, LI Yu-xian1,2, KONG Xiao-jun1,2, LI Shu-shen1
1National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Department of Physics, Hebei Normal University, Shijiazhuang 050016
Binding Energy of Excitons Bound to Neutral Donors in Two-Dimensional Semiconductors
LIU Jian-jun1,2;LI Yu-xian1,2;KONG Xiao-jun1,2;LI Shu-shen1
1National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Department of Physics, Hebei Normal University, Shijiazhuang 050016
Abstract： The binding energies of excitons bound to neutral donors in two-dimensional (2D) semiconductors within the spherical-effective-mass approximation, which are nondegenerate energy bands, have been calculated by a varia-tional method for a relevant range of the effective electron-to-hole mass ratio σ. The ratio of the binding energy of a 2D exciton bound to a neutral donor to that of a 2D neutral donor is found to be from 0.58 to 0.10. In the limit of vanishing σ and large σ, the results agree fairly well with previous experimental results. The results of this approach are compared with those of earlier theories.
LIU Jian-jun;LI Yu-xian;KONG Xiao-jun;LI Shu-shen. Binding Energy of Excitons Bound to Neutral Donors in Two-Dimensional Semiconductors[J]. 中国物理快报, 1999, 16(7): 526-528.
LIU Jian-jun, LI Yu-xian, KONG Xiao-jun, LI Shu-shen. Binding Energy of Excitons Bound to Neutral Donors in Two-Dimensional Semiconductors. Chin. Phys. Lett., 1999, 16(7): 526-528.
1999, Vol. 16 
