Ge1Sb2Te4 Based Chalcogenide Random Access Memory Array Fabricated by 0.18-μm CMOS Technology
ZHANG Ting 1,2, SONG Zhi-Tang 1, FENG Gao-Ming 1,2, LIU Bo1, WU Liang-Cai1, FENG Song-Lin1, CHEN Bomy3
1Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing1000493 Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, U.S.A.
Ge1Sb2Te4 Based Chalcogenide Random Access Memory Array Fabricated by 0.18-μm CMOS Technology
1Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing1000493 Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, U.S.A.
摘要Ge1Sb2Te4-based chalcogenide random access memory array, with a tungsten heating electrode of 260nm in diameter, is fabricated by 0.18-μm CMOS technology. Electrical performance of the device, as well as physical and electrical properties of Ge1Sb2Te4 thin film, is characterized. SET and RESET programming currents are 1.6 and 4.1mA, respectively, when pulse width is 100ns. Both the values are larger than those of the Ge2Sb2Te5-based ones with the same structure and contact size. Endurance up to 106 cycles with a resistance ratio of about 100 has been achieved.
Abstract：Ge1Sb2Te4-based chalcogenide random access memory array, with a tungsten heating electrode of 260nm in diameter, is fabricated by 0.18-μm CMOS technology. Electrical performance of the device, as well as physical and electrical properties of Ge1Sb2Te4 thin film, is characterized. SET and RESET programming currents are 1.6 and 4.1mA, respectively, when pulse width is 100ns. Both the values are larger than those of the Ge2Sb2Te5-based ones with the same structure and contact size. Endurance up to 106 cycles with a resistance ratio of about 100 has been achieved.
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2007, Vol. 24 
