2007, Vol. 24(3): 790-792    DOI:
Ge1Sb2Te4 Based Chalcogenide Random Access Memory Array Fabricated by 0.18-μm CMOS Technology
ZHANG Ting 1,2, SONG Zhi-Tang 1, FENG Gao-Ming 1,2, LIU Bo1, WU Liang-Cai1, FENG Song-Lin1, CHEN Bomy3
1Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing1000493 Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, U.S.A.
收稿日期 2006-06-29  修回日期 1900-01-01
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