2007, Vol. 24(3): 790-792 DOI: | ||
Ge1Sb2Te4 Based Chalcogenide Random Access Memory Array Fabricated by 0.18-μm CMOS Technology | ||
ZHANG Ting 1,2, SONG Zhi-Tang 1, FENG Gao-Ming 1,2, LIU Bo1, WU Liang-Cai1, FENG Song-Lin1, CHEN Bomy3 | ||
1Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing1000493 Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, U.S.A. | ||
收稿日期 2006-06-29 修回日期 1900-01-01 | ||
Supporting info | ||
[1] Cho S L, Yi J H, Ha Y H et al 2005 Symposium on VLSI [2] Ahn S J, Hwang Y N, Song Y J et al 2005 Symposium on [3] Yamada N and Matsunaga T 2000 J. Appl. Phys. 88 7020 [4] Yamada N, Ohno E, Nishiuchi K, Akahira N and Masatoshi T 1991 [5] Zhang T, Liu B, Xia J L, Song Z T, Feng S L and Chen B 2004 [6] Zhang T, Liu B, Song Z T, Liu W L, Feng S L and Chen B 2005 [7] Morales-S\'anchez E, Laine B, Prokhorov E et al 2004 [8] Mao Z L, Chen H and Jung A L 1995 J. Appl. Phys. 78 [9] Matsunaga T and Yamada N 2004 Phys. Rev. B 69 104111 [10] Morales-S\'anchez E, Prokhorov E et al 2005 Thin Solid [11] Wang Q F, Shi L P, Huang S M et al 2004 Adv. Data Stor. [12] Kang D H, Ahn D H, Kwon M H et al 2004 Jpn. J. Appl. [13] Kang D H, Cheong B K, Jeong J H et al 2005 Appl. Phys. [14] Miao X S, Shi L P, Lee H K et al 2006 Jpn. J. Appl. [15] Radaelli A, Ielmini D, Lacaita A L, Pellizzer F, Pirovano A and [16] Pirovano A et al 2004 IEEE Trans. Dev. Mater. Relat. [17] Matsuzaki N et al 2005 IEDM Tech. Dig. 738 |
||