摘要The formation of silicon carbide upon deposition of C60 and Si on Si(100) surface at 850°C is studied via x-ray photoelectron spectroscopy and reflection high energy electron diffraction (RHEED). The C 1s, O 1s and Si 2p core-level spectra and the RHEED patterns indicate the formation of 3C--SiC
Abstract：The formation of silicon carbide upon deposition of C60 and Si on Si(100) surface at 850°C is studied via x-ray photoelectron spectroscopy and reflection high energy electron diffraction (RHEED). The C 1s, O 1s and Si 2p core-level spectra and the RHEED patterns indicate the formation of 3C--SiC
LIU Yan-Fang;LIU Jin-Feng;XU Peng-Shou;PAN Hai-Bin. X-Ray Photoelectron Spectroscopy and Reflection High Energy Electron Diffraction of Epitaxial Growth SiC on Si(100) Using C60 and Si[J]. 中国物理快报, 2007, 24(7): 2022-2024.
LIU Yan-Fang, LIU Jin-Feng, XU Peng-Shou, PAN Hai-Bin. X-Ray Photoelectron Spectroscopy and Reflection High Energy Electron Diffraction of Epitaxial Growth SiC on Si(100) Using C60 and Si. Chin. Phys. Lett., 2007, 24(7): 2022-2024.
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