Enhanced Field Emission from Large-Area Arrays of W18O49 Pencil-Like Nanostructure
LI Zheng-Lin, DENG Shao-Zhi, XU Ning-Sheng, LIU Fei, CHEN Jun
State Key Lab of Optoelectronic Materials and Technologies, and Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275
Enhanced Field Emission from Large-Area Arrays of W18O49 Pencil-Like Nanostructure
LI Zheng-Lin, DENG Shao-Zhi, XU Ning-Sheng, LIU Fei, CHEN Jun
State Key Lab of Optoelectronic Materials and Technologies, and Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275
Field enhancement and field screening are two major factors affecting field emission performance of arrays of quasi one-dimensional nanostructures. We have observed enhanced field emission from large-area arrays of W18O49 pencil-like nanostructure due to both the effects of high aspect ratio and enlarged spacing between neighboring nanostructures. These arrays may be grown on silicon substrates by the multi-step thermal evaporation process. The spacing of nanotip-to-nanotip between neighboring nanostructures may be increased by adjusting the growth temperature. The arrays are observed to have a typical turn-on field as low as about 1.26 MV/m and a threshold field as low as about 3.39 MV/m, resulting in increasing field enhancement and decreasing field screening effect.
Field enhancement and field screening are two major factors affecting field emission performance of arrays of quasi one-dimensional nanostructures. We have observed enhanced field emission from large-area arrays of W18O49 pencil-like nanostructure due to both the effects of high aspect ratio and enlarged spacing between neighboring nanostructures. These arrays may be grown on silicon substrates by the multi-step thermal evaporation process. The spacing of nanotip-to-nanotip between neighboring nanostructures may be increased by adjusting the growth temperature. The arrays are observed to have a typical turn-on field as low as about 1.26 MV/m and a threshold field as low as about 3.39 MV/m, resulting in increasing field enhancement and decreasing field screening effect.
(Nanoscale materials and structures: fabrication and characterization)
引用本文:
LI Zheng-Lin;DENG Shao-Zhi;XU Ning-Sheng;LIU Fei;CHEN Jun. Enhanced Field Emission from Large-Area Arrays of W18O49 Pencil-Like Nanostructure[J]. 中国物理快报, 2010, 27(6): 68504-068504.
LI Zheng-Lin, DENG Shao-Zhi, XU Ning-Sheng, LIU Fei, CHEN Jun. Enhanced Field Emission from Large-Area Arrays of W18O49 Pencil-Like Nanostructure. Chin. Phys. Lett., 2010, 27(6): 68504-068504.
[1] Fan S S, Chapline M G, Franklin N R, Tombler T W, Cassell A M and Dai H J 1999 Science 283 512 [2] Li Y B, Bando Y, Golberg D and Kurashima K 2002 Appl. Phys. Lett. 81 5048 [3] Jo S H, Banerjee D and Ren Z F 2004 Appl. Phys. Lett. 85 1407 [4] Xu C X and Sun X W 2003 Appl. Phys. Lett. 83 3806 [5] Zhou J, Gong L, Deng S Z, Chen J, She J C, Xu N S, Yang R S and Wang Z L 2005 Appl. Phys. Lett. 87 223108 [6] Chen J, Dai Y Y, Luo J, Li Z L, Deng S Z, She J C and Xu N S 2007 Appl. Phys. Lett. 90 253105 [7] Li Y B, Bando Y and Golberg D 2003 Adv. Mater. 15 1294 [8] Zhou J, Ding Y, Deng S Z, Gong L, Xu N S and Wang Z L 2005 Adv. Mater. 17 2107 [9] Jeon S and Yong K 2007 Nanotechnology 18 245602 [10] Liu J G, Zhang Z J, Zhao Y, Su X, Liu S and Wang E G 2005 Small 1 310 [11] Chang M T, Chou L J, Chueh Y L, Lee Y C, Hsieh C H, Chen C D, Lan Y W and Chen L J 2007 Small 4 658 [12] Seelaboyina R, Huang J, Park J, Kang D H and Choi W B 2006 Nanotechnology 17 4840 [13] Zhu Y Q, Hu W, Hsu W K, Terrones M, Grobert N, Hare J P, Kroto H W, Walton D R M and Terrones H 1999 Chem. Phys. Lett. 309 327 [14] Hu W B, Zhu Y Q, Hsu W K, Chang B H, Terrones M, Grobert N, TerronesH, Hare J P, Kroto H W and Walton D R M 2000 Appl. Phys. A 70 231 [15] Chi L F, Xu N S, Deng S Z, Chen J and She J C 2006 Nanotechnology 17 5590 [16] Jin Y Z, Zhu Y Q, Whitby R L D, Yao N, Ma R, Watts P C P, Kroto H W and Walton D R M 2004 J. Phys. Chem. B 108 15572 [17] Zhou J, Deng S Z, Gong L, Ding Y, Chen J, Huang J X, Chen J, Xu N S and Wang Z L 2006 J. Phys. Chem. B 110 10296 [18] Zhu Y W, Yu T, Cheong F C, Xu X J, Lim C T, Tan V B C, Thong J T L and Sow C H 2005 Nanotechnology 16 88
2010, Vol. 27 
