Electronic Structure of (111)-Oriented Strained-Layer SiGe Superlattice
GU Binglin, DUAN Wenhui, ZHU Jialin, WANG Mingliang*
Department of Physics, Tsinghua University, Beijing 100084
*Department of Physics, Shanxi University, Taiyuan 030006
Electronic Structure of (111)-Oriented Strained-Layer SiGe Superlattice
GU Binglin;DUAN Wenhui;ZHU Jialin;WANG Mingliang*
Department of Physics, Tsinghua University, Beijing 100084
*Department of Physics, Shanxi University, Taiyuan 030006
关键词 ：
71.25.Rk ,
73.20.Dx ,
68.65.+g
Abstract ： Using the first-principle self-consistent linear-muffin-tin-orbital method within the local density approximation, band structure of (111)-oriented strained-layer SiGe superlattice is studied. Three different ordered arrangements of atom layers (Si-GeΞSi-Ge Si-SiΞ Ge-Ge and SiΞSi-GeΞGe) are considered. Calcu- lated results indicate that (111)-oriented SiGe strained layer superlattices are semiconductive, with a band gap about 1.0eV. The first two superlattices are indirect band gap semiconductors, and the third one (SiΞSi-GeΞ Ge) is a direct band gap semiconductor. The influence of strain on the band structure is also investigated.
Key words ：
71.25.Rk
73.20.Dx
68.65.+g
出版日期: 1992-04-01
引用本文:
GU Binglin;DUAN Wenhui;ZHU Jialin;WANG Mingliang*. Electronic Structure of (111)-Oriented Strained-Layer SiGe Superlattice[J]. 中国物理快报, 1992, 9(4): 198-201.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1992/V9/I4/198
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