Metallization of Cu3 N Semiconductor under High Pressure
YANG Liu-Xiang, ZHAO Jing-Geng, YU Yong, LI Feng-Ying, YU Ri-Cheng, JIN Chang-Qing
Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080
Metallization of Cu3 N Semiconductor under High Pressure
YANG Liu-Xiang;ZHAO Jing-Geng;YU Yong;LI Feng-Ying;YU Ri-Cheng;JIN Chang-Qing
Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080
关键词 ：
62.50.+p ,
71.30.+h ,
81.05.Je
Abstract ： Using the four-probe method, we investigate the electrical conductivity of Cu3 N under high pressure with the diamond anvil cell. Cu3 N is a semiconductor at ambient pressure showing a band gap about 1eV. With the application of quasi-hydrostatic pressures, its resistance decreases dramatically over five orders of magnitude from ambient to 9GPa. The compound became a metal at pressure about 5.5GPa, which is in well agreement with the recent first principle calculation.
Key words ：
62.50.+p
71.30.+h
81.05.Je
出版日期: 2006-02-01
:
62.50.+p
71.30.+h
(Metal-insulator transitions and other electronic transitions)
81.05.Je
(Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides))
引用本文:
YANG Liu-Xiang;ZHAO Jing-Geng;YU Yong;LI Feng-Ying;YU Ri-Cheng;JIN Chang-Qing. Metallization of Cu3 N Semiconductor under High Pressure[J]. 中国物理快报, 2006, 23(2): 426-427.
3 N Semiconductor under High Pressure. Chin. Phys. Lett., 2006, 23(2): 426-427.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I2/426
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