Growth Feature of Cubic Boron Nitride on c-BN Crystal Substrates
YANG Da-Peng, SU Zuo-Peng, DU Yong-Hui, JI Xiao-Rui, YANG Xu-Xin, GONG Xi-Liang, ZHANG Tie-Chen
National Laboratory of Superhard Materials, Jilin University, Changchun 130023
Growth Feature of Cubic Boron Nitride on c-BN Crystal Substrates
YANG Da-Peng;SU Zuo-Peng;DU Yong-Hui;JI Xiao-Rui;YANG Xu-Xin;GONG Xi-Liang;ZHANG Tie-Chen
National Laboratory of Superhard Materials, Jilin University, Changchun 130023
关键词 ：
81.15.-z ,
81.05.Je
Abstract ： Cubic boron nitride (c-BN) films were deposited on highly-oriented (111) bulk c-BN crystal by using the rf magnetron sputtering method. The growth films are characterized by micro-Raman spectroscopy (μ-RS) and scanning electron microscopy (SEM). The results show that the high crystallization electron transparent c-BN films in thickness of about 10μm are obtained. Island and step growth models are clearly shown.
Key words ：
81.15.-z
81.05.Je
出版日期: 2006-05-01
:
81.15.-z
(Methods of deposition of films and coatings; film growth and epitaxy)
81.05.Je
(Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides))
引用本文:
YANG Da-Peng;SU Zuo-Peng;DU Yong-Hui;JI Xiao-Rui;YANG Xu-Xin;GONG Xi-Liang;ZHANG Tie-Chen. Growth Feature of Cubic Boron Nitride on c-BN Crystal Substrates[J]. 中国物理快报, 2006, 23(5): 1324-1326.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I5/1324
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2006, Vol. 23 
