Abstract： We have studied the light induced rapid thermal diffusion of boron atom in silicon. The samples were heated by the rapid thermal processor. We have carried out spreading resistance and deep level transient spectroscopy (DLTS) measurements. The impurity distribution profile is much shallower and steeper than that of conventional thermal diffusion and the diffusion depth can be con-trolled to 0.1μm. Several peaks in the deep level transient spectra were detected and the density of these defects ranges from 0.5 x 10 12 to 5.6 x 10 12/cm3. The passivation and annihilation of these defects have been studied. We have also made the planar diode whose diameter is 500μm. The reverse current and the back breakdown voltage of the planar diode are 10 -9 A and 80V respectively.
SHI Wanquan;HOU Qingrun;LIU Xuejun;LIU Shixiang;FU Zhengqing;LU Liwu*;LI Yuanjing*. Light Induced Rapid Thermal Diffusion of Boron Atom in Silicon[J]. 中国物理快报, 1992, 9(9): 475-478.
SHI Wanquan, HOU Qingrun, LIU Xuejun, LIU Shixiang, FU Zhengqing, LU Liwu*, LI Yuanjing*. Light Induced Rapid Thermal Diffusion of Boron Atom in Silicon. Chin. Phys. Lett., 1992, 9(9): 475-478.
1992, Vol. 9 
