SELF- AND IMPURITY-DIFFUSION MECHANISMS IN UNDOPED AND MODULATION-DOPED (GaA1)As SUPERLATTICES
WANG Enge
International Centre for Materials Physics, Academia Sinica, Shenyang 110015
and Department of Physics, Peking University, Beijing 100871
SELF- AND IMPURITY-DIFFUSION MECHANISMS IN UNDOPED AND MODULATION-DOPED (GaA1)As SUPERLATTICES
WANG Enge
International Centre for Materials Physics, Academia Sinica, Shenyang 110015
and Department of Physics, Peking University, Beijing 100871
关键词 ：
66.30.-h ,
73.20.Hb ,
73.20.Dx
Abstract ： The charged states of antisites and interstitials in undoped and n- or p-type Si modulation-doped ( GaAl ) As superlattices have been determined by the calculated electronic structures wing recursion method within tight-binding formalism. Based on the behavior of these point defects, some new mechanisms that describe the self-diffusion and impurity diffusion processes are suggested and discussed.
Key words ：
66.30.-h
73.20.Hb
73.20.Dx
出版日期: 1990-11-01
引用本文:
WANG Enge. SELF- AND IMPURITY-DIFFUSION MECHANISMS IN UNDOPED AND MODULATION-DOPED (GaA1)As SUPERLATTICES[J]. 中国物理快报, 1990, 7(11): 506-509.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1990/V7/I11/506
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1990, Vol. 7 
