Trap Behaviors of Constant Electric Field Stressing in Thin Oxynitride and Re-oxidized Oxynitride Films
YANG Bingliang (B. L. Yang), LIU Baiyong (B. Y. Liu), H. Wong*, Y. C. Cheng*
Department of Applied Physics, South China University of Technology, Guangzhou 510641
*Department of Electronic Engineering City Polytechnic of
Hong Kong Tat Chee Avenue, Kowloon, Hong Kong
Trap Behaviors of Constant Electric Field Stressing in Thin Oxynitride and Re-oxidized Oxynitride Films
YANG Bingliang (B. L. Yang);LIU Baiyong (B. Y. Liu);H. Wong*;Y. C. Cheng*
Department of Applied Physics, South China University of Technology, Guangzhou 510641
*Department of Electronic Engineering City Polytechnic of
Hong Kong Tat Chee Avenue, Kowloon, Hong Kong
Abstract： The behaviors of constant electric field stressing of the thin (200Å) oxynitride and re-oxidized oxynitride films are investigated. The flat-band shift is not a simple function of the stressing field. The observed phenomena are attributed to the significance of trap filling, electronic tunneling and trap generation at different stressing field strengths. Re-oxidized sample is found to have high resistant to the electron tunneling and trap generation.
(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
引用本文:
YANG Bingliang (B. L. Yang);LIU Baiyong (B. Y. Liu);H. Wong*;Y. C. Cheng*. Trap Behaviors of Constant Electric Field Stressing in Thin Oxynitride and Re-oxidized Oxynitride Films[J]. 中国物理快报, 1992, 9(9): 479-482.
YANG Bingliang (B. L. Yang), LIU Baiyong (B. Y. Liu), H. Wong*, Y. C. Cheng*. Trap Behaviors of Constant Electric Field Stressing in Thin Oxynitride and Re-oxidized Oxynitride Films. Chin. Phys. Lett., 1992, 9(9): 479-482.
1992, Vol. 9 
