中国物理快报  2023, Vol. 40 Issue (4): 47101-    DOI: 10.1088/0256-307X/40/4/047101
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Electronic Structure of the Weak Topological Insulator Candidate Zintl Ba$_{3}$Cd$_{2}$Sb$_{4}$
Jierui Huang1,2†, Tan Zhang1†, Sheng Xu3,4†, Zhicheng Rao1,2, Jiajun Li1,2, Junde Liu1,2, Shunye Gao1,2, Yaobo Huang5, Wenliang Zhu6, Tianlong Xia3,4*, Hongming Weng1,2,7,8*, and Tian Qian1,7*
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2University of Chinese Academy of Sciences, Beijing 100049, China
3Department of Physics, Renmin University of China, Beijing 100872, China
4Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
5Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, China
6School of Physics and Information Technology, Shaanxi Normal University, Xi'an 710119, China
7Songshan Lake Materials Laboratory, Dongguan 523808, China
8CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China