In-Plane Magnetization-Induced Corner States in Bismuthene
Bin Han1,2 , Junjie Zeng1,2 , and Zhenhua Qiao1,2*
1 ICQD, Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China2 CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
Abstract ：We theoretically demonstrate that the electronic second-order topological insulator with robust corner states, having a buckled honeycomb lattice, can be realized in bismuthene by inducing in-plane magnetization. Based on the $sp^3$ Slater–Koster tight-binding model with parameters extracted from first-principles results, we show that spin-helical edge states along zigzag boundaries are gapped out by the in-plane magnetization whereas four robust in-gap electronic corner states at the intersection between two zigzag boundaries arise. By regulating the orientation of in-plane magnetization, we show different position distribution of four corner states with different energies. Nevertheless, it respects some spatial symmetries and thus can protect the higher-order topological phase. Combined with the Kane–Mele model, we discuss the influence of the magnetization orientation on the position distribution of corner states.
收稿日期: 2021-10-27
出版日期: 2021-12-29
:
73.43.Nq
(Quantum phase transitions)
71.20.-b
(Electron density of states and band structure of crystalline solids)
73.43.-f
(Quantum Hall effects)
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2022, Vol. 39 
