2012, Vol. 29(1): 18102-018102    DOI: 10.1088/0256-307X/29/1/018102
	A Study of GaN Grown on SiH4 Pre-Treated 6H-SiC Substrates
	SONG Shi-Wei1 , LIANG Hong-Wei1**, LIU Yang1, XIA Xiao-Chuan1, SHEN Ren-Sheng1, LUO Ying-Min1, DU Guo-Tong1,2
	1School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 2State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012
	收稿日期 2011-09-20  修回日期 1900-01-01
	Supporting info
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