A Study of GaN Grown on SiH4 Pre-Treated 6H-SiC Substrates
SONG Shi-Wei1 , LIANG Hong-Wei1**, LIU Yang1, XIA Xiao-Chuan1, SHEN Ren-Sheng1, LUO Ying-Min1, DU Guo-Tong1,2
1School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 2State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012
A Study of GaN Grown on SiH4 Pre-Treated 6H-SiC Substrates
SONG Shi-Wei1 , LIANG Hong-Wei1**, LIU Yang1, XIA Xiao-Chuan1, SHEN Ren-Sheng1, LUO Ying-Min1, DU Guo-Tong1,2
1School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 2State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012
摘要GaN thin films are grown on Si-terminated (0001) 6H-SiC substrates pre-treated with SiH4 in a metal organic chemical vapor deposition system. The influence of the SiH4 pre−treatment conditions on the SiC surface is carefully investigated. It is found that SiH4 could react with the SiC surface oxide, which will change the surface termination. Moreover, our experiments demonstrate that SiH4 pre-treatment can distinctly influence the AlGaN nucleation layer and the basic characteristics of GaN.
Abstract：GaN thin films are grown on Si-terminated (0001) 6H-SiC substrates pre-treated with SiH4 in a metal organic chemical vapor deposition system. The influence of the SiH4 pre−treatment conditions on the SiC surface is carefully investigated. It is found that SiH4 could react with the SiC surface oxide, which will change the surface termination. Moreover, our experiments demonstrate that SiH4 pre-treatment can distinctly influence the AlGaN nucleation layer and the basic characteristics of GaN.
SONG Shi-Wei;LIANG Hong-Wei**;LIU Yang;XIA Xiao-Chuan;SHEN Ren-Sheng;LUO Ying-Min;DU Guo-Tong;. A Study of GaN Grown on SiH4 Pre-Treated 6H-SiC Substrates[J]. 中国物理快报, 2012, 29(1): 18102-018102.
SONG Shi-Wei, LIANG Hong-Wei**, LIU Yang, XIA Xiao-Chuan, SHEN Ren-Sheng, LUO Ying-Min, DU Guo-Tong,. A Study of GaN Grown on SiH4 Pre-Treated 6H-SiC Substrates. Chin. Phys. Lett., 2012, 29(1): 18102-018102.
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2012, Vol. 29 
