2011, Vol. 28(12): 128502-128502    DOI: 10.1088/0256-307X/28/12/128502
	Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering
	HUANG Hai-Qin1, SUN Jian2, LIU Feng-Juan1, ZHAO Jian-Wei1, HU Zuo-Fu1, LI Zhen-Jun1, ZHANG Xi-Qing1**, WANG Yong-Sheng1
	1Key Laboratory of Luminescence and Optical Information (Ministry of Education), Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 2Beijing BOE Optoelectronics Technology CO., LTD, Beijing 100176
	收稿日期 2011-07-27  修回日期 1900-01-01
	Supporting info
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