Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering
HUANG Hai-Qin1, SUN Jian2, LIU Feng-Juan1, ZHAO Jian-Wei1, HU Zuo-Fu1, LI Zhen-Jun1, ZHANG Xi-Qing1**, WANG Yong-Sheng1
1Key Laboratory of Luminescence and Optical Information (Ministry of Education), Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 2Beijing BOE Optoelectronics Technology CO., LTD, Beijing 100176
Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering
HUANG Hai-Qin1, SUN Jian2, LIU Feng-Juan1, ZHAO Jian-Wei1, HU Zuo-Fu1, LI Zhen-Jun1, ZHANG Xi-Qing1**, WANG Yong-Sheng1
1Key Laboratory of Luminescence and Optical Information (Ministry of Education), Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 2Beijing BOE Optoelectronics Technology CO., LTD, Beijing 100176
摘要We report on the fabrication and electrical characteristics of Ga-doped ZnO thin film transistors (TFTs). Low Ga-doped (0.7wt%) ZnO thin films were deposited on SiO2/p−Si substrates by rf magnetron sputtering. The GZO TFTs show a mobility of 1.76 cm2/V⋅s, an on/off ratio of 1.0×106, and a threshold voltage of 35 V. The time−dependent instability of the TFT is studied. The VTH shifts negatively. In addition, the device shows a decrease of the on/off ratio, mainly due to the increase of the off-current. The mechanisms of instability are discussed.
Abstract：We report on the fabrication and electrical characteristics of Ga-doped ZnO thin film transistors (TFTs). Low Ga-doped (0.7wt%) ZnO thin films were deposited on SiO2/p−Si substrates by rf magnetron sputtering. The GZO TFTs show a mobility of 1.76 cm2/V⋅s, an on/off ratio of 1.0×106, and a threshold voltage of 35 V. The time−dependent instability of the TFT is studied. The VTH shifts negatively. In addition, the device shows a decrease of the on/off ratio, mainly due to the increase of the off-current. The mechanisms of instability are discussed.
HUANG Hai-Qin;SUN Jian;LIU Feng-Juan;ZHAO Jian-Wei;HU Zuo-Fu;LI Zhen-Jun;ZHANG Xi-Qing**;WANG Yong-Sheng
. Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering[J]. 中国物理快报, 2011, 28(12): 128502-128502.
HUANG Hai-Qin, SUN Jian, LIU Feng-Juan, ZHAO Jian-Wei, HU Zuo-Fu, LI Zhen-Jun, ZHANG Xi-Qing**, WANG Yong-Sheng
. Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering. Chin. Phys. Lett., 2011, 28(12): 128502-128502.
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2011, Vol. 28 
