2011, Vol. 28(12): 127203-127203    DOI: 10.1088/0256-307X/28/12/127203
	Improved Performance of Pentacene Organic Field-Effect Transistors by Inserting a V2O5 Metal Oxide Layer
	ZHAO Geng1, CHENG Xiao-Man1,2**, TIAN Hai-Jun2, DU Bo-Qun1, LIANG Xiao-Yu2
	1School of Science, Tianjin University of Technology, Tianjin 300384 2Institute of Material Physics, Key Laboratory of Display Material and Photoelectric Devices (Ministry of Education), and Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384)
	收稿日期 2011-10-17  修回日期 1900-01-01
	Supporting info
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