2011, Vol. 28(11): 117302-117302    DOI: 10.1088/0256-307X/28/11/117302
The Tunable Bandgap of AB-Stacked Bilayer Graphene on SiO2 with H2O Molecule Adsorption
WANG Tao1, GUO Qing1**, AO Zhi-Min2**, LIU Yan1, WANG Wen-Bo1, SHENG Kuang1, YU Bin3,1
1College of Electrical Engineering, Zhejiang University, Hangzhou 130027
2School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia
3College of Nanoscale Science and Engineering, State University of New York, Albany, New York 12203, USA
收稿日期 2011-06-14  修回日期 1900-01-01
Supporting info
[1] Schwierz F 2010 Nature Nanotechnol. 5 487
[2] Geim A K 2009 Science 324 1530
[3] Allen M J, Tung V C and Kane R B 2010 Chem. Rev. 110 132
[4] Lin Y M, Dimitrakopoulos C, Jenkins K A, Farmer D B and Chiu H Y 2010 Science 327 662
[5] Lin Y M and Avouris P 2008 Nano Lett. 8 2119
[6] Lin Y M, Chiu H Y, Jenkins K A, Farmer D B, Avouris P and Alberto V G 2010 IEEE Electron. Devices Lett. 31 68
[7] Ohta T, Bostwick A, Seyller T, Horn K and Rotenberg E 2006 Science 313 951
[8] Kim M, Debessai M and Yoo C S 2010 Nature Chem. 2 784
[9] Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: John Wiley & Sons)
[10] Son Y W, Marvin L and Louie S G 2006 Phys. Rev. Lett. 97 216803
[11] Yan Q, Huang B, Yu J, Zheng F, Zang J, Wu J, Gu B L, Liu F and Duan W 2007 Nano Lett. 7 1469
[12] Li X, Wang X, Zhang L, Lee S and Da H 2008 Science 319 1229
[13] Nilsson J and Neto A C 2007 Phys. Rev. Lett. 98 126801
[14] Ohta T, Bostwick A, Seyller T, Horn K and Rotenberg E 2006 Science 313 951
[15] Yavari F, Kritzinger C, Gaire C, Song L, Gulapalli H, Tasciuc T B, Ajayan P M and Koratkar N 2010 Small 6 2535
[16] Morozov S V, Novoselov K S, Katsnelson M I, Schedin F, Ponomarenko L A, Jiang D and Geim A K 2006 Phys. Rev. Lett. 97 016801
[17] Nakada K, Fujita M, Dresselhaus G and Dresselhaus M S 1996 Phys. Rev. B 54 17954
[18] Wehling T O, Balatsky A V, Katsnelson M I, Lichtenstein A I, Scharnberg K and Wiesendanger R 2007 Phys. Rev. B 75 125425
[19] Blake P, Hill E W, Castro A H, Novoselov K S, Jiang D, Yang R, Booth T J and Geim A K 2007 Appl. Phys. Lett. 91 063124
[20] Ao Z M, Zheng W T and Jiang Q 2008 Nanotechnology 10 275710
[21] Kang Y J, Kang J and Chang K J 2008 Phys. Rev. B 78 115404
[22] Shemella P and Nayak S K 2009 Appl. Phys. Lett. 94 032101
[23] Wehiling T O, Lichtenstein A I and Katsnelson M I 2008 Appl. Phys. Lett. 93 202110
[24] Leenaerts O, Partoens B and Peeters F M 2008 Phys. Rev. B 77 125416
[25] Ribeiro M, Peres N M R, Coutinho J and Briddon P R 2008 Phys. Rev. B 78 075442
[26] Sabio J, Seoánez C, Fratini S, Guinea F, NetoA H C and Sols F 2008 Phys. Rev. B 77 195409
[27] Berashevich J and Chakrborty T 2009 Phys. Rev. B 80 033404
[28] Delley B 2000 J. Chem. Phys. 113 7756
[29] Hammer B et al 1999 Phys. Rev. B 59 7413
[30] Moser J, Verdaguer A, Jimenez D, Barreiro A and Bachtold A B 2008 Appl. Phys. Lett. 92 123507
[31] Wang L J, Cao G, Tu T, Li H O, Zhou C, Hao X J, Guo G C and Guo G P 2011 Chin. Phys. Lett. 28 067301
[32] Ouyang F P, Chen L J, Xiao J and Zhang H 2011 Chin. Phys. Lett. 28 047304
[33] Pan L J, Chen W G, Zhang R Q, Hu X and Jia Y 2010 Chin. Phys. Lett. 27 077304
[34] Xu Y H, Jia Y L, Zhou J and Dong J M 2010 Chin. Phys. Lett. 27 057303
[35] Han M, Zhang Y and Zhang H B 2010 Chin. Phys. Lett. 27 037302