2011, Vol. 28(11): 116803-116803    DOI: 10.1088/0256-307X/28/11/116803
	Simulation and Suppression of the Gas Phase Pre-reaction in Metal-Organic Chemical Vapor Deposition of ZnO
	ZHU Guang-Yao, GU Shu-Lin**, ZHU Shun-Ming, TANG Kun, YE Jian-Dong, ZHANG Rong, SHI Yi, ZHENG You-Dou
	Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
	收稿日期 2011-04-17  修回日期 1900-01-01
	Supporting info
	[1] Look D C et al 1998 Solid State Commun. 105 399 [2] Behrends A et al 2009 Microelectron. J. 40 280 [3] Thrush E J and Boyd A R 2006 III-Nitride Semiconductor Material (London: Imperial College Press) p 73 [4] Pawlowski R P et al 2000 J. Cryst. Growth 221 622 [5] Qian F et al 2005 Nano Lett. 5 2287 [6] Dai J N, Liu H C, Fang W Q, Wang L, Pu Y, Chen Y F and Jiang F Y 2005 J. Cryst. Growth 283 93 [7] Bagnall D M, Chen Y F, Shen M Y, Zhu Z, Goto T and Yao T 1998 J. Cryst. Growth 184/185 605 [8] Lienhard J H IV and Lienhard J H V 2003 A Heat Transfer Textbook 3rd edn (Cambridge: Phlogiston Press) p 19 [9] Liu J G, Gu S L, Zhu S M, Tang K, Liu X D, Chen H and Zheng T D 2010 J. Cryst. Growth 312 2710 [10] Dumont H, Marbeuf A, Bouree J E and Gorochov O 1993 J. Mater. Chem. 3 1075 [11] Sokolovskii A E and Baev A K 1995 Russ. J. Gen. Chem. 65 674 [12] Roth A P and Williams D F 1981 J. Appl. Phys. 52 6685 [13] Patnaik S, Huh J S and Jenson K F 1992 The 6th International Conference on Metal-organic Vapor Phase Epitaxy (Cambridge, USA 8–11 June 1992) p 250 [14] Thiandoume C, Sallet V, Triboulet R and Gorochov O 2009 J. Cryst. Growth 311 1411 [15] Fan G, Maung N, Ng T L, Williams J O and Wright A C 1995 J. Chem. Soc. Faraday Trans. 91 3475 [16] Dunlop A N and Price S J 1970 Can. J. Chem. 48 3205 [17] Price S J Wand Trotman-Dickenson A F 1957 Trans. Faraday Soc. 53 1208 [18] Lewis K G and Stimson V R 1960 J. Chem. Soc. 3087 [19] Barnard J A 1959 Trans. Faraday Soc. 55 947 [20] Lewis D, Keil M and Sarr M 1974 J. Am. Chem. Soc. 96 4398 [21] Newman C G, O'Neal H E, Ring M A, Leska F and Shipley N 1979 Int. J. Chem. Kinet. 11 1167 [22] Tsang W 1964 J. Chem. Phys. 40 1498