2011, Vol. 28(9): 98101-098101    DOI: 10.1088/0256-307X/28/9/098101
	Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices
	LI Zhe-Yang1,2**, HAN Ping1, LI Yun2, NI Wei-Jiang2, BAO Hui-Qiang3, LI Yu-Zhu2
	1Jiangsu Provincial Key Lab of Advance Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093 2National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016 3TanKeBlue Semiconductor CO., Ltd., Beijing 100190
	收稿日期 2011-03-24  修回日期 1900-01-01
	Supporting info
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