2011, Vol. 28(7): 77701-077701    DOI: 10.1088/0256-307X/28/7/077701
	Peripheral Ferroelectric Domain Switching and Polarization Fatigue in Nonvolatile Memory Elements of Continuous Pt/SrBi2Ta2O9/Pt Thin-Film Capacitors
	CHEN Min-Chuan, JIANG An-Quan**
	State Key Laboratory of ASIC & System, Department of Microelectronics, Fudan University, Shanghai 200433
	收稿日期 2011-01-20  修回日期 1900-01-01
	Supporting info
	[1] Scott J F and Paz de Araujo C A 1989 Science 246 1400 [2] Wu D, Li A D, Ling H Q, Yu T, Liu Z G and Ming N B 2000 J. Appl. Phys. 87 1795 [3] Shimojo Y et al 2009 Symposium on VLSI Technology (Kyoto, Japan 15–18 June 2009) p 218 [4] Nishihara Y and Ito Y 2002 IEEE J. Solid-State Circuits 37 1479 [5] Durkan C, Welland M E, Chu D P and Migliorato P 2000 Electron. Lett. 36 1538 [6] Kall U, Bottger U, Lin Y K, Schneller T, Waser R 2002 Integr. Ferroelectr. 47 101 [7] Scott J F and Dawber M 2000 Appl. Phys. Lett. 76 1060 [8] Lou X J, Zhang M, Redfern S A T and Scott J F 2006 Phys. Rev. Lett. 97 177601 [9] Jiang A Q, Lin Y Y, Tang T A 2007 J. Appl. Phys. 102 074109 [10] Jiang A Q, Lin Y Y and Tang T A 2006 Appl. Phys. Lett. 89 032906 [11] Wu D, Li A D, Ling H Q, Yu T, Liu Z G and Ming N B 2000 Appl. Phys. Lett. 76 2208 [12] Alpay S P, Misirlioglu I B, Nagarajan V, and Ramesh R 2004 Appl. Phys. Lett. 85 2044 [13] Sinnamon L J, Bowman R M, and Gregg J M 2001 Appl. Phys. Lett. 78 1724 [14] Jiang A Q, Lee H J, Kim G H and Hwang C S 2009 Adv. Mater. 21 2870