摘要We verify the domain sideway motion around the peripheral regions of the crossed capacitors of top and bottom electrode bars without electrode coverage. To avoid the crosstalk problem between adjacent memory cells, the safe distance between adjacent elements of Pt/SrBi2Ta2O9/Pt thin−film capacitors is estimated to be 0.156 µm. Moreover, the fatigue of Pt/SrBi2Ta2O9/Pt thin-film capacitors is independent of the individual memory size due to the absence of etching damage.
Abstract：We verify the domain sideway motion around the peripheral regions of the crossed capacitors of top and bottom electrode bars without electrode coverage. To avoid the crosstalk problem between adjacent memory cells, the safe distance between adjacent elements of Pt/SrBi2Ta2O9/Pt thin−film capacitors is estimated to be 0.156 µm. Moreover, the fatigue of Pt/SrBi2Ta2O9/Pt thin-film capacitors is independent of the individual memory size due to the absence of etching damage.
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2011, Vol. 28 
