2011, Vol. 28(7): 76801-076801    DOI: 10.1088/0256-307X/28/7/076801
	Anisotropic Diffusion Evolution of Vacancies Created by Oxygen Etching on a Si Surface
	WANG Shu-Hua1,2, CAI Qun1**
	1State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433 2College of Sciences, Shanghai Institute of Technology, Shanghai 200233
	收稿日期 2011-04-26  修回日期 1900-01-01
	Supporting info
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