Anisotropic Diffusion Evolution of Vacancies Created by Oxygen Etching on a Si Surface
WANG Shu-Hua1,2, CAI Qun1**
1State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433 2College of Sciences, Shanghai Institute of Technology, Shanghai 200233
Anisotropic Diffusion Evolution of Vacancies Created by Oxygen Etching on a Si Surface
WANG Shu-Hua1,2, CAI Qun1**
1State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433 2College of Sciences, Shanghai Institute of Technology, Shanghai 200233
摘要We report the diffusion behavior of dimer vacancies on a Si(100)-(2×1) surface by using ultrahigh−vacuum scanning tunneling microscopy. The dimer vacancies are created by oxygen etching of Si atoms at elevated temperatures. By annealing the sample at 600–750°C, the dimer vacancies uniformly distribute on the terrace nucleate to form larger elongated voids of one atomic layer deep. The long axis of these voids is parallel to the Si dimer rows. During annealing, the surface morphology evolves in a way dominantly caused by the anisotropic diffusion of the dimer vacancies. A difference of diffusion barriers of 0.17±0.09 eV is obtained between the [110] and [110] directions.
Abstract：We report the diffusion behavior of dimer vacancies on a Si(100)-(2×1) surface by using ultrahigh−vacuum scanning tunneling microscopy. The dimer vacancies are created by oxygen etching of Si atoms at elevated temperatures. By annealing the sample at 600–750°C, the dimer vacancies uniformly distribute on the terrace nucleate to form larger elongated voids of one atomic layer deep. The long axis of these voids is parallel to the Si dimer rows. During annealing, the surface morphology evolves in a way dominantly caused by the anisotropic diffusion of the dimer vacancies. A difference of diffusion barriers of 0.17±0.09 eV is obtained between the [110] and [110] directions.
(Diffusion of adsorbates, kinetics of coarsening and aggregation)
引用本文:
WANG Shu-Hua;CAI Qun**
. Anisotropic Diffusion Evolution of Vacancies Created by Oxygen Etching on a Si Surface[J]. 中国物理快报, 2011, 28(7): 76801-076801.
WANG Shu-Hua, CAI Qun**
. Anisotropic Diffusion Evolution of Vacancies Created by Oxygen Etching on a Si Surface. Chin. Phys. Lett., 2011, 28(7): 76801-076801.
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