2011, Vol. 28(4): 48102-048102    DOI: 10.1088/0256-307X/28/4/048102
	Growth of 2 µm Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition
	WEI Meng1**, WANG Xiao-Liang1,2, XIAO Hong-Ling1,2, WANG Cui-Mei1,2, PAN Xu1, HOU Qi-Feng1, WANG Zhan-Guo2
	1Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
	收稿日期 2010-11-16  修回日期 1900-01-01
	Supporting info
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