Growth of 2 µm Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition
WEI Meng1**, WANG Xiao-Liang1,2, XIAO Hong-Ling1,2, WANG Cui-Mei1,2, PAN Xu1, HOU Qi-Feng1, WANG Zhan-Guo2
1Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Growth of 2 µm Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition
WEI Meng1**, WANG Xiao-Liang1,2, XIAO Hong-Ling1,2, WANG Cui-Mei1,2, PAN Xu1, HOU Qi-Feng1, WANG Zhan-Guo2
1Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
摘要A 2 µm high quality crack-free GaN film was successfully grown on 2-inch Si(111) substrates by metal organic chemical vapor deposition with a high temperature AlN/graded-AlGaN multibuffer and an AlN/GaN superlattice interlayer. It is found that the structures, as well as the thicknesses of the multibuffer and interlayer, are crucial for the growth of a crack-free GaN epilayer. The GaN(0002) XRD FWHM of the crack-free sample is 479.8 arcsec, indicating good crystal quality. An AlGaN/GaN heterostructure was grown and tested by Van der Pauw Hall measurement. The electron mobility of two-dimensional electron gas increases from 1928 cm2/V⋅s to 12277 cm2/V⋅s when the test-temperature decreases from room temperature to liquid nitrogen temperature. The electron mobility is comparable to that of AlGaN/GaN heterostructures grown on sapphire, and the largest value is obtained for an AlGaN/GaN/Si(111) heterostructure grown by metal organic chemical vapor deposition.
Abstract：A 2 µm high quality crack-free GaN film was successfully grown on 2-inch Si(111) substrates by metal organic chemical vapor deposition with a high temperature AlN/graded-AlGaN multibuffer and an AlN/GaN superlattice interlayer. It is found that the structures, as well as the thicknesses of the multibuffer and interlayer, are crucial for the growth of a crack-free GaN epilayer. The GaN(0002) XRD FWHM of the crack-free sample is 479.8 arcsec, indicating good crystal quality. An AlGaN/GaN heterostructure was grown and tested by Van der Pauw Hall measurement. The electron mobility of two-dimensional electron gas increases from 1928 cm2/V⋅s to 12277 cm2/V⋅s when the test-temperature decreases from room temperature to liquid nitrogen temperature. The electron mobility is comparable to that of AlGaN/GaN heterostructures grown on sapphire, and the largest value is obtained for an AlGaN/GaN/Si(111) heterostructure grown by metal organic chemical vapor deposition.
WEI Meng**;WANG Xiao-Liang;XIAO Hong-Ling;WANG Cui-Mei;PAN Xu;HOU Qi-Feng;WANG Zhan-Guo
. Growth of 2 µm Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition[J]. 中国物理快报, 2011, 28(4): 48102-048102.
WEI Meng**, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, PAN Xu, HOU Qi-Feng, WANG Zhan-Guo
. Growth of 2 µm Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition. Chin. Phys. Lett., 2011, 28(4): 48102-048102.
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