2011, Vol. 28(3): 37102-037102 DOI: 10.1088/0256-307X/28/3/037102 | ||
Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN | ||
HOU Qi-Feng1**, WANG Xiao-Liang1,2, XIAO Hong-Ling1,2, WANG Cui-Mei1,2, YANG Cui-Bai1,2, YIN Hai-Bo1, LI Jin-Min1, WANG Zhan-Guo2 | ||
1Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 2Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
||
收稿日期 2010-11-29 修回日期 1900-01-01 | ||
Supporting info | ||
[1] Yang L, Hao Y, Ma X H, Quan S, Hu G Z, Jiang S G and Yang L Y 2009 Chin. Phys. Lett. 26 117104 [2] Wu Y F, Moore M, Saxler A, Wisleder T and Parikh P 2006 IEEE Device Research Conference (State College, PA, USA 26–28 June 2006) 64th p 151 [3] Yang L, Ma J J, Zhu C, Hao Y and Ma X H 2010 Chin. Phys. Lett. 27 027102 [4] Pimputkar S, Speck J S, DenBaars S P and Nakamura S 2009 Nature Photonics 3 180 [5] Kuriyama K, Ooi M, Onoue A, Kushida K, Okada M and Xu Q 2006 Appl. Phys. Lett. 88 132109 [6] Ogino T and Aoki M 1980 Jpn. J. Appl. Phys. 19 2395 [7] Reshchikov M A and Morkoc H 2005 J. Appl. Phys. 97 061301 [8] Zhao D G, Jiang D S, Zhu J J, Liu Z S, Wang H, Zhang S M, Wang Y T and Yang Hui 2009 Appl. Phys. Lett. 95 041901 [9] Sedhain A, Li J, Lin J Y and Jiang H X 2010 Appl. Phys. Lett. 96 151902 [10] Lyons J L, Janotti A and Van de Walle C G 2010 Appl. Phys. Lett. 97 152108 [11] Reshchikov M A, Shahedipour F, Korotkov R Y, Ulmer M P and Wessels B W 1999 Physica B 273-274 105 [12] Reshchikov M A, Shahedipour F, Korotkov R Y, Wessels B W and Ulmer M P 2000 J. Appl. Phys. 87 3351 [13] Seager C H, Wright A F, Yu J and Götz W 2002 J. Appl. Phys. 92 6553 [14] Armitage R, Yang Q and Weberb E R 2005 J. Appl. Phys. 97 073524 [15] Xu F J, Shen B, Lu L, Miao Z L, Song J, Zhang Z J, Zhang G Y, Hao X P, Wang B Y, Shen X Q and Okumura H 2010 J. Appl. Phys. 107 023528 [16] Kucheyev S O, Toth M, Phillips M R, Williams J S, Jagadish C and Li G 2002 J. Appl. Phys. 91 5867 [17] Lu L, Shen B, Xu F J, Xu J, Gao B, Yang Z J, Zhang G Y, Zhang X P and Yu D P 2007 J. Appl. Phys. 102 033510 [18] Godlewski M, Goldys E M and Philips M R 2000 J. Lumin. 87–89 1155 [19] Godlewski M, Goldys E M, Philips M R, Langer R and Barski A 1998 Appl. Phys. Lett. 73 3686 [20] Reshchikov M A and Korotkov R Y 2001 Phys. Rev. B 64 115205 [21] Toth M, Fleischer K and Phillips M R 1999 Phys. Rev. B 59 1575 [22] Elsner J, Jones R, Heggie M I, Sitch P K, Haugk M, Frauenheim Th, Öberg S and Briddon P R 1998 Phys. Rev. B 58 12571 [23] Knobloch K, Perlin P, Krueger J, Weber E R and Kisielowski C 1998 MRS Internet J. Nitride Semicond. Res. 3 4 [24] Porporati A A and Pezzott G 2009 Eur. Phys. J. Appl. Phys. 48 30901 [25] Eckey L, Holst J Ch, Maxim P, Heitz R, Hoffmann A, Broser I, Meyer B K, Wetzel C, Mokhov E N and Baranov P G 1996 Appl. Phys. Lett. 68 415 [26] Chen G D, Smith M, Lin J Y, Jiang H X, Salvador A, Sverdlov B N, Botchkarv A and Morkoc H 1996 J. Appl. Phys. 79 2675 |
||