| 2010, Vol. 27(10): 104208-104208 DOI: 10.1088/0256-307X/27/10/104208 | ||
| Capping-Barrier Layer Effect on Quantum Dot Optoelectronic Characteristics | ||
| A. Rostami1,2**, H. Rasooli Saghai2, H. Baghban1,2, N. Sadoogi1, Y. Seyfinejad3 | ||
| 1Photonic and Nanocrystal Research Lab (PNRL), Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz 51664, Iran 2School of Engineering Emerging Technologies, University of Tabriz, Tabriz 51664, Iran 3Department of Electrical Engineering, Islamic Azad University, Tabriz Branch, Sardrud Center Tabriz, Iran |
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| 收稿日期 2009-12-24 修回日期 1900-01-01 | ||
| Supporting info | ||
| [1] Zhang X, Xiong G and Feng X 2006 Physica E 33 120 [2] Ryzhii V et al 2004 Semicond. Sci. Technol. 19 8 [3] Steiner T Editor 2004 Semiconductor Nanostructures for Optoelectronic Applications (Boston: Artech House) [4] Rostami A et al 2007 Microelectron. J. 38 342 [5] Harrison P 2005 Quantum Wells, Wires and Dots (New York: John Wiley) [6] Datta S 1995 Electronic Transport in Mesoscopic Systems (Cambridge: Cambridge University) [7] Gómez I et al 2002 J. Appl. Phys. 92 4486 [8] Guo K X and Yu Y B 2005 Chin. J. Phys. 43 932 [9] Liu J, Bai Y and Xiong G 2004 Physica E 23 70 |
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