2008, Vol. 25(4): 1284-1286 DOI: | ||
A Novel Kind of Transverse Micro-Stack High-Power Diode Bars | ||
ZHANG Lei1,2, CUI Bi-Feng1, LI Jian-Jun1, GUO Wei-Lling1, WANG Zhi-Qun1, SHEN Guang-Di1 | ||
1Opto-Electronic Technology Laboratory, Beijing University of Technology, Beijing 1000222Beijing Institute of Tracking and Telecommunication Technology, Beijing 100094 | ||
收稿日期 2007-07-30 修回日期 1900-01-01 | ||
Supporting info | ||
[1] Gourevitch A, Belenky G, Donetsky D, Laikhtman B, Trussell [2] Wolff D, Bonati G, Hennig P and Voelckel H 2005 Proc. [3] Lian P, Yin T, Gao G, ZOU D S, Chen C H, Li J J and Shen G [4] Li J J ,Han J, Deng J, Cui B F, Lian P, Zou D S and Shen G [5] Cui B F, Li J J, Zou D S, Lian P, Han J R, Wang D F, Du J
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