A Novel Kind of Transverse Micro-Stack High-Power Diode Bars
ZHANG Lei1,2, CUI Bi-Feng1, LI Jian-Jun1, GUO Wei-Lling1, WANG Zhi-Qun1, SHEN Guang-Di1
1Opto-Electronic Technology Laboratory, Beijing University of Technology, Beijing 1000222Beijing Institute of Tracking and Telecommunication Technology, Beijing 100094
A Novel Kind of Transverse Micro-Stack High-Power Diode Bars
1Opto-Electronic Technology Laboratory, Beijing University of Technology, Beijing 1000222Beijing Institute of Tracking and Telecommunication Technology, Beijing 100094
摘要Novel transverse micro-stack semiconductor laser bars are put forward to improve the output optical power of semiconductor laser bars at low injection current. More importantly, the novel laser bars have a coupled large optical cavity, which can overcome the problem of catastrophic optical damage and improve light beam quality due to the coherently coupled emitting along the transverse direction. The micro-stack tunnel regeneration tri-active region laser structure was grown by metal organic chemical vapour deposition. For a weakly coupled uncoated device, the optical power exceeds 60W under 50A driving current and the slope efficiency reaches 1.55W/A. Further experiments show that the perpendicular divergence of 23° is achieved from transverse strongly coupled devices.
Abstract：Novel transverse micro-stack semiconductor laser bars are put forward to improve the output optical power of semiconductor laser bars at low injection current. More importantly, the novel laser bars have a coupled large optical cavity, which can overcome the problem of catastrophic optical damage and improve light beam quality due to the coherently coupled emitting along the transverse direction. The micro-stack tunnel regeneration tri-active region laser structure was grown by metal organic chemical vapour deposition. For a weakly coupled uncoated device, the optical power exceeds 60W under 50A driving current and the slope efficiency reaches 1.55W/A. Further experiments show that the perpendicular divergence of 23° is achieved from transverse strongly coupled devices.
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2008, Vol. 25 
