2008, Vol. 25(4): 1281-1283 DOI: | ||
Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature | ||
ZHANG Li-Qun1, ZHANG Shu-Ming1, YANG Hui1,2, CAO Qing3, JI Lian1, ZHU Jian-Jun1, LIU Zong-Shun1, ZHAO De-Gang1, JIANG De-Sheng1, DUAN Li-Hong1, WANG Hai1, SHI Yong-Sheng1, LIU Su-Ying1, CHEN Liang-Hui3, LIANG Jun-Wu1 | ||
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO BOX 912, Beijing 1000832Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 2151233Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, PO BOX 912, Beijing 100083 | ||
收稿日期 2007-12-27 修回日期 1900-01-01 | ||
Supporting info | ||
[1]Nakamura S, Senoh M, Iwasa N, Yamada T, Matsuhita T, [2] Nagahama S I, Yanamoto T, Sano M and Mukai T 2002 [3] Nakamura S, Senoh M, Nagahama S I, Iwasa N, Matsushita T [4] Yang H, Chen L H, Zhang S M, Chong M, Zhu J J, Zhao D G, [5] Chen J, Wang J F, Wang H, Zhu J J, Zhang S M, Zhao D G,
[7] Zhang J C, Wang J F, Wang Y T, Liu J P, Zhu J J and Yang [8] Wang X L, Zhao D G, Yang H and Liang J W 2007 Chin. [9] Lei T, Ludwig K F and Moustakas T 1993 J. Appl. [10] Nakamura S, Senoh M, Nagahama S I, Iwasa N, Yamada T, [11] Goepfert I D, Schubert P E, Osinsky A, Norris P E and |
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