Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature
ZHANG Li-Qun1, ZHANG Shu-Ming1, YANG Hui1,2, CAO Qing3, JI Lian1, ZHU Jian-Jun1, LIU Zong-Shun1, ZHAO De-Gang1, JIANG De-Sheng1, DUAN Li-Hong1, WANG Hai1, SHI Yong-Sheng1, LIU Su-Ying1, CHEN Liang-Hui3, LIANG Jun-Wu1
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO BOX 912, Beijing 1000832Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 2151233Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, PO BOX 912, Beijing 100083
Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO BOX 912, Beijing 1000832Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 2151233Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, PO BOX 912, Beijing 100083
摘要Room-temperature operation of cw GaN based multi-quantum-well laser diodes (LDs) is demonstrated. The LD structure is grown on a sapphire (0001) substrate by metalorganic chemical vapour deposition. A 2.5μm×800μm ridge waveguide structure is fabricated. The electrical and optical characteristics of the laser diode under direct current injection at room temperature are investigated. The threshold current and voltage of the LD under cw operation are 110mA and 10.5V, respectively. Thermal induced series resistance decrease and emission wavelength red-shift are observed as the injection current is increased. The full width at half maximum for the parallel and perpendicular far field pattern (FFP) are 12°and 32°, respectively.
Abstract：Room-temperature operation of cw GaN based multi-quantum-well laser diodes (LDs) is demonstrated. The LD structure is grown on a sapphire (0001) substrate by metalorganic chemical vapour deposition. A 2.5μm×800μm ridge waveguide structure is fabricated. The electrical and optical characteristics of the laser diode under direct current injection at room temperature are investigated. The threshold current and voltage of the LD under cw operation are 110mA and 10.5V, respectively. Thermal induced series resistance decrease and emission wavelength red-shift are observed as the injection current is increased. The full width at half maximum for the parallel and perpendicular far field pattern (FFP) are 12°and 32°, respectively.
ZHANG Li-Qun;ZHANG Shu-Ming;YANG Hui; CAO Qing;JI Lian;ZHU Jian-Jun;LIU Zong-Shun;ZHAO De-Gang; JIANG De-Sheng;DUAN Li-Hong;WANG Hai;SHI Yong-Sheng;LIU Su-Ying;CHEN Liang-Hui;LIANG Jun-Wu. Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature[J]. 中国物理快报, 2008, 25(4): 1281-1283.
ZHANG Li-Qun, ZHANG Shu-Ming, YANG Hui, CAO Qing, JI Lian, ZHU Jian-Jun, LIU Zong-Shun, ZHAO De-Gang, JIANG De-Sheng, DUAN Li-Hong, WANG Hai, SHI Yong-Sheng, LIU Su-Ying, CHEN Liang-Hui, LIANG Jun-Wu. Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature. Chin. Phys. Lett., 2008, 25(4): 1281-1283.
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2008, Vol. 25 
