| 2008, Vol. 25(5): 1848-1849 DOI: | ||
| Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor | ||
| XU Cheng1,2, LIU Bo1, CHEN Yi-Feng2, LIANG Shuang2, SONG Zhi-Tang1, FENG Song-Lin1, WAN Xu-Dong3, YANG Zuo-Ya3, XIE Joseph3, CHEN Bomy4 | ||
| 1Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2Graduate School of the Chinese Academy of Sciences, Beijing 1000493Semiconductor Manufacturing International Corporation, Shanghai 2012034Silicon Storage Technology Inc., 1171 Sonora Court, Sunnyvale, CA 94086, USA | ||
| 收稿日期 2008-01-30 修回日期 1900-01-01 | ||
| Supporting info | ||
[1] Gill M et al 2002 ISSCC Dig. Tech. paper 202 [2] Hwang Y N et al 2003 Symp. VLSI Circuits Digest 173 [3] Adler D et al 1980 J. Appl. Phys. {\bf 51 3289 [4] Reifenberg J P et al 2007 J. Appl. Phys. {\bf 91 [5] Liu B et al., 2004 Semicond. Sci. Technol. {\bf 19 [6] Wang K et al 2004 J. Appl. Phys. {\bf 96 5557 [7] Zhang T et al 2004 Chin. Phys. Lett. {\bf 21 741 [8] Xu C et al 2005 Chin. Phys. Lett. {\bf 22 2929 [9] Zhang T et al 2005 Chin. Phys. Lett. {\bf 22 1803 [10] Lai S and Lowrey T 2001 Tech. Dig. Int. Electron [11] Lai S 2003 Int. Electron Devices Meet. 10.1.1 |
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