2008, Vol. 25(5): 1871-1874 DOI: | ||
Artificial Modulation of Ferroelectric Thin Films into Antiferroelectric through H+ Implantation for High-Density Charge Storage | ||
ZHANG Yan-Jun, FEI Jin-Wen, TANG Ting-Ao, JIANG An-Quan | ||
ASIC & System State Key Lab, Department of Microelectronics, Fudan University, Shanghai 200433 | ||
收稿日期 2008-01-28 修回日期 1900-01-01 | ||
Supporting info | ||
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