2008, Vol. 25(6): 2190-2193 DOI: | ||
Interface Evolution of TiN/Poly Si as Gate Material on Si/HfO2 Stack | ||
JIANG Ran, YAO Li-Ting | ||
School of Physics and Microelectronics, Shandong University, Jinan 250100 | ||
收稿日期 2007-11-20 修回日期 1900-01-01 | ||
Supporting info | ||
[1] Muller D A, Sorsch T, Moccio S, Baumann H F, Evans-Lutterodt K and [2] Lysaght P S, Peterson J J, Foran B, Young C, Bersuker G and Huff H [3] Ragnarsson L -A, Pantisano L, Kaushik V, Saito S -I, Shimamoto Y, [4] Lu Y K, Zhu W, Chen X F and Gopalkrishnan R 2006 [5] Lemme M C, Efavi J K, Gottlob H D B, Mollenhauer T, Wahlbrink T and [6] Park D G, Lim K Y, Cho H J, Cha T H, Yeo I S, Roh J S and Park J W [7] Gu D F, Sandwip K D and Majhi P 2006 Appl. Phys. Lett. [8] Lin Y X, \"Ozt\"urk M C, Se B C, Rhee J, Lee J C and Misra V [9] Cho H J, Lee H L, Park S G, Park H B, Jeon T S, Jin B J et al [10] Jiang R Xie E Q and Wang Z F 2006 Appl. Phys. Lett. 89 [11] Suh Y S, Heuss G, Lee J H and Misra V 2003 IEEE [12] Luan H, Alshareef H N, Harris H R, Wen H C, Choi K, Senzaki Y, |
||