摘要TiN as gate electrode in Si/HfO2/TiN/poly-Si stack is evaluated after the postmetal annealing treatments. Interface reactions are investigated using electron-energy-loss spectroscopy and x-ray photoelectron spectroscopy. The work function of the TiN/poly-Si stack shows strong dependence on the postmetal deposition annealing conditions. The interfacial product in TiN/poly-Si interface is inferred as TiSiN, which is beneficial for the whole high-k stack since TiSiN possesses higher work function compared to TiN and poly-Si.
Abstract：TiN as gate electrode in Si/HfO2/TiN/poly-Si stack is evaluated after the postmetal annealing treatments. Interface reactions are investigated using electron-energy-loss spectroscopy and x-ray photoelectron spectroscopy. The work function of the TiN/poly-Si stack shows strong dependence on the postmetal deposition annealing conditions. The interfacial product in TiN/poly-Si interface is inferred as TiSiN, which is beneficial for the whole high-k stack since TiSiN possesses higher work function compared to TiN and poly-Si.
JIANG Ran;YAO Li-Ting. Interface Evolution of TiN/Poly Si as Gate Material on Si/HfO2 Stack[J]. 中国物理快报, 2008, 25(6): 2190-2193.
JIANG Ran, YAO Li-Ting. Interface Evolution of TiN/Poly Si as Gate Material on Si/HfO2 Stack. Chin. Phys. Lett., 2008, 25(6): 2190-2193.
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2008, Vol. 25 
