2008, Vol. 25(8): 3075-3078 DOI: | ||
High Current Multi-finger InGaAs/InP Double Heterojunction Bipolar Transistor with the Maximum Oscillation Frequency 253GHz | ||
JIN Zhi1, SU Yong-Bo1, CHENG Wei1, LIU Xin-Yu1, XU An-Huai2, QI Ming2 | ||
1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 1000292State Key Lab of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 | ||
收稿日期 2008-03-26 修回日期 1900-01-01 | ||
Supporting info | ||
[1] Paidi V K, Griffith Z, Wei Y, Dahlstrom M, Urteaga M, [2] Sawdai D, Chang P C, Gambin V, Zeng X, Wang J, Barsky M, [3] Cripps S C 1999 RF Power Amplifiers for Wireless [4] Wei Y 2003 PhD Thesis (University of California at Santa Barbara) [5] Kirk C T Jr 1962 {it IRE Trans. Electron Devices 9 [6] Jin Z, Su Y. Cheng W, Liu X Y, Xu A H and Qi M 2008 [7] Jin Z, Prost W, Neumann S and Tegude F J 2004 Appl. [8] Liu W 1998 Handbook of I$\!$I$\!$I--V Heterojunction [9] Harrison I, Dahlstrom M, Krishna S, Griffith Z, Kim Y M [10] Jin Z and Liu X Y Sci. Chin. E 51 |
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