2008, Vol. 25(7): 2683-2685 DOI: | ||
High-Speed InGaAs/InP Double Heterostructure Bipolar Transistor with High Breakdown Voltage | ||
JIN Zhi1, SU Yong-Bo1, CHENG Wei1, LIU Xin-Yu1, XU An-Huai2, QI Ming2 | ||
1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 1000292State Key Lab of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 | ||
收稿日期 2007-12-11 修回日期 1900-01-01 | ||
Supporting info | ||
[1] Hafez W, Snodgrass W and Feng M 2005 Appl. Phys. [2] Su S, Liu X, Xu A et al 2006 Chin. J. Semiconduct. [3] Dahlstrom M 2003 PhD Thesis (University of [4] Jin Z and Liu X 2008 Sci. Chin. E 51 {(accepted) [5] Jin Z, Prost W, Neumann S and Tegude F J 2004 Appl. [6] Rodwell M J W, Urteaga M, Mathew T et al 2001 IEEE [7] Liu W 1998 Handbook of III--V Heterojunction [8] Kirk C T Jr 1962 IRE Trans. Electron. Devices |
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