2008, Vol. 25(7): 2683-2685    DOI:
High-Speed InGaAs/InP Double Heterostructure Bipolar Transistor with High Breakdown Voltage
JIN Zhi1, SU Yong-Bo1, CHENG Wei1, LIU Xin-Yu1, XU An-Huai2, QI Ming2
1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 1000292State Key Lab of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
收稿日期 2007-12-11  修回日期 1900-01-01
Supporting info

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[3] Dahlstrom M 2003 PhD Thesis (University of
California, Santa Barbara, USA)

[4] Jin Z and Liu X 2008 Sci. Chin. E 51 {(accepted)

[5] Jin Z, Prost W, Neumann S and Tegude F J 2004 Appl.
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[6] Rodwell M J W, Urteaga M, Mathew T et al 2001 IEEE
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[7] Liu W 1998 Handbook of III--V Heterojunction
Bipolar Transistors (New York: Wiley-Interscience) p 722

[8] Kirk C T Jr 1962 IRE Trans. Electron. Devices
9 164