2008, Vol. 25(10): 3597-3600    DOI:
Characterization Method of Polycrystalline Materials Using Conductive Atomic Force Microscopy
DING Xi-Dong1, FU Gang2, XIONG Xiao-Min1, ZHANG Jin-Xiu1
1State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 5102752Department of Physics, Guangzhou University, Guangzhou 510405
收稿日期 2008-04-12  修回日期 1900-01-01
Supporting info

[1] Freer R and Leach C 2004 Solid State Ionics
173 41

[2] Tao M, Ai B, Dorlanne and Loubiere A 1986 J. Appl.
Phys. 61 1562.

[3] Olsson E and Dunlop G L 1989 J. Appl. Phys. 66
3666

[4] Fleig J, Rodewald S and Maier J 2000 Solid State
Ionics 136 905

[5] Wear J M R and Abraham D W 1991 J. Vac. Sci. Technol.
B 9 1559

[6] Nonnenmacher M et al 1991 Appl. Phys. Lett.
58 2921

[7] De Wolf P et al 1995 J. Vac. Sci. Technol. A
13 1699

[8] De Wolf P et al 1999 Appl. Phys. Lett.
73 2155

[9] Williams C C et al 1989 Appl. Phys. Lett.
55 203

[10] Williams C C et al 1989 Appl. Phys. Lett.
55 1662

[11] Diebold A C et al 1996 J. Vac. Sci. Technol.
B 14 196

[12] Kalinin S V and Bonnell D A 2001 Appl. Phys. Lett.
78 1306

[13] Kalinin S V and Bonnell D A 2002 J. Appl. Phys.
91 832

[14] Shao R, Kalinin S V and Bonnell D A 2003 Appl. Phys.
Lett. 82 1869

[15] O'Hayre R, Lee M and Prinz F B 2004 J. Appl. Phys.
95 8382

[16] Layson A, Gadad S and Teeters D 2003 Electrochim.
Acta 48 2207

[17] Pingree L S C et al 2005 IEEE Trans.
Nanotechnol. 4 255

[18] Fumagalli L et al 2006 Nanotechnology
17 4581

[19] Pingree L S C and Hersam M C 2005 Appl. Phys. Lett.
87 233117

[20] Chung S Y, Lee S I and Choi J H 2006 Appl. Phys.
Lett. 89 191907

[21] O'Hayre R et al 2004 J. Appl. Phys. 96
3540

[22] Pablo P J de et al 1998 Appl. Phys. Lett.
73 3300