2008, Vol. 25(12): 4273-4275    DOI:
High Power Continuous-Wave Diode-End-Pumped 1.34-μm Nd:GdVO4 Laser
ZHOU Rui1,2, RUAN Shuang-Chen1, DU Chen-Lin1, YAO Jian-Quan2
1Shenzhen Key Laboratory of Laser Engineering, College of Electronic Science and Technology, Shenzhen University, Shenzhen 5180602College of Precision Instrument and Optoelectronics Engineering, Institute of Laser and Optoelectronics, Tianjin University, Tianjin 300072
收稿日期 2008-05-05  修回日期 1900-01-01
Supporting info

[1] Inoue Y and Fujikawa S 2000 IEEE J. Quantum
Electron. 36 751

[2] Zhu H Y, Huang C H, Zhang G, Wei Y, Huang L X, Chen J,
Chen W D and Chen Z Q 2007 Opt. Commun. 270 296

[3] Tucker A W, Birnbaum M and Fincher C L 1976 J. Appl.
Phys. 47 232

[4] Ennaroglu A 1999 Opt. Commun. 164 191

[5] Du C L, Qin L J, Meng X N, Xu G B, Wang Z P, Xu X Q, Zhu
L, Xu B C and Shao Z S 2002 Opt. Commun. 212 177

[6] Zhang H J, Du C L, Wang J Y, Hu X B, Xu X Q, Dong C M, Liu
J H, Kong H K, Jiang H D, Han R J, Shao Z S and Jiang M H 2003
J. Crystal Growth 249 492

[7] He J L, Yang J M and Liu J 2005 Opt. Laser Technol.
37 612

[8] Ogilvy H, Withford M J, Dekker P and Piper J A 2003
Opt. Express 11 2411

[9] Lieto A D, Minguzzi P, Pirastu A and Magni V 2003
IEEE J. Quantum Electron. 39 903

[10] Yao A Y, Hou W, Kong Y P, Guo L, Wu L A, Li R N, Cui D F,
Xu Z Y, Bi Y and Zhou Y 2005 J. Opt. Soc. Am. B 22 2129

[11] Zhang H J, Wang J Y, Du C L, Xu X Q, Liu J H, Hu X B,
Shao Z S and Jiang M H 2005 J. Crystal Growth 275 e687

[12] Du C, Ruan S, Zhang H, Yu Y, Zeng F, Wang J and Jiang M
2005 Appl. Phys. B 80 45

[13] Chen Y F 1999 IEEE J. Quantum Electron. 35
234