High Power Continuous-Wave Diode-End-Pumped 1.34-μm Nd:GdVO4 Laser
ZHOU Rui1,2, RUAN Shuang-Chen1, DU Chen-Lin1, YAO Jian-Quan2
1Shenzhen Key Laboratory of Laser Engineering, College of Electronic Science and Technology, Shenzhen University, Shenzhen 5180602College of Precision Instrument and Optoelectronics Engineering, Institute of Laser and Optoelectronics, Tianjin University, Tianjin 300072
High Power Continuous-Wave Diode-End-Pumped 1.34-μm Nd:GdVO4 Laser
ZHOU Rui1,2, RUAN Shuang-Chen1, DU Chen-Lin1, YAO Jian-Quan2
1Shenzhen Key Laboratory of Laser Engineering, College of Electronic Science and Technology, Shenzhen University, Shenzhen 5180602College of Precision Instrument and Optoelectronics Engineering, Institute of Laser and Optoelectronics, Tianjin University, Tianjin 300072
摘要A high power cw all-solid-state 1.34-μm Nd:GdVO4 laser is experimentally demonstrated. With a diode-double-end-pumped configuration and a simple plane-parallel cavity, a maximum output power of 27.9W is obtained at incident pump power of 96W, introducing a slope efficiency of 35.4%. To the best of our knowledge, this is the highest output power of diode-end-pumped 1.3-μm laser. With the experimental data, the thermal-stress-resistance figure of merit of Nd:GdVO4 crystal with 0.3at% Nd3+ doped level is calculated to be larger than 9.94W/cm.
Abstract：A high power cw all-solid-state 1.34-μm Nd:GdVO4 laser is experimentally demonstrated. With a diode-double-end-pumped configuration and a simple plane-parallel cavity, a maximum output power of 27.9W is obtained at incident pump power of 96W, introducing a slope efficiency of 35.4%. To the best of our knowledge, this is the highest output power of diode-end-pumped 1.3-μm laser. With the experimental data, the thermal-stress-resistance figure of merit of Nd:GdVO4 crystal with 0.3at% Nd3+ doped level is calculated to be larger than 9.94W/cm.
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2008, Vol. 25 
