| 2009, Vol. 26(2): 26803-026803 DOI: 10.1088/0256-307X/26/2/026803 | ||
| Various Trap States at SiGe-SiO2 Interface Formed by a Pulsed Laser | ||
| HUANG Wei-Qi1, LÜ Quan1, XU Li2, ZHANG Rong-Tao1, WANG Hai-Xu1, JIN Feng1 | ||
| 1Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 5500252Department of Physics, Datong University, Datong 730013 | ||
| 收稿日期 2008-10-14 修回日期 1900-01-01 | ||
| Supporting info | ||
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