摘要We report fabrication of low-dimensional structures in air by a pulsed laser on SiGe alloy samples in which different oxide structures are formed by laser irradiation and annealing treatment. The micro-structures on SiGe are more complex than those on Si. A series of photoluminescence (PL) emission is observed due to various trap states at the SiGe-SiO2 interface formed under different preparing conditions. The peak centre of PL emission exhibits red-shift from Si to SiGe because of narrower gap. A model for explaining the PL emission is proposed in which the trap states of the interface between some oxide and SiGe play an important role.
Abstract：We report fabrication of low-dimensional structures in air by a pulsed laser on SiGe alloy samples in which different oxide structures are formed by laser irradiation and annealing treatment. The micro-structures on SiGe are more complex than those on Si. A series of photoluminescence (PL) emission is observed due to various trap states at the SiGe-SiO2 interface formed under different preparing conditions. The peak centre of PL emission exhibits red-shift from Si to SiGe because of narrower gap. A model for explaining the PL emission is proposed in which the trap states of the interface between some oxide and SiGe play an important role.
HUANG Wei-Qi;LÜQuan;XU Li;ZHANG Rong-Tao;WANG Hai-Xu;JIN Feng. Various Trap States at SiGe-SiO2 Interface Formed by a Pulsed Laser[J]. 中国物理快报, 2009, 26(2): 26803-026803.
HUANG Wei-Qi, LÜ, Quan, XU Li, ZHANG Rong-Tao, WANG Hai-Xu, JIN Feng. Various Trap States at SiGe-SiO2 Interface Formed by a Pulsed Laser. Chin. Phys. Lett., 2009, 26(2): 26803-026803.
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2009, Vol. 26 
