2009, Vol. 26(4): 42901-042901 DOI: 10.1088/0256-307X/26/4/042901 | ||
Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors | ||
WU Guang-Guo1, LI Hong-Ri1, LIANG Kun1, YANG Ru1, CAO Xue-Lei2, WANG Huan-Yu2, AN Jun-Ming3, HU Xiong-Wei3, HAN De-Jun1 |
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1The Key Laboratory of Beam Technology and Materials Modification of the Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 1008752Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 1000493Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 | ||
收稿日期 2009-01-09 修回日期 1900-01-01 | ||
Supporting info | ||
[1] Gatti E and Rehak P1983 Proc. DFP Workshop on [2] Gatti E and Rehak P 1984 Nucl. Instrum. Methods A [3] Leutenegger P, Longoni A, Fiorini C, Struder L, Kemmer [4] Hansen K, Reckleben C, Diehl I and Welter E 2008 [5] http://www.ketek.net. [6]Struder L 2002 Proc. SPIE 4141 29 [7]Alberti R, Fiorini C, Guazzoni C, Klatka T and Longoni A [8] Struder L 2000 Nucl. Instrum. Methods A [9] Lutz G 2003 Nucl. Instrum. Methods A 501 288 [10]Gianluigi Z, Alexander R and Andrea V 2007 Nucl. [11] Fiorini C and Longoni A 2008 Nucl. Instrum. Methods [12] Longoni A, Finorini C, Guazzoni C, Buzzetti S, Beuini M, [13]Alberti R, Bjeoumikhov A, Grassi N, Guazzoni C, Klatka T, [14] Geronimo G D, Chen W, Fried J, Zheng Li, Pinelli D A, [15] Hartmann R, Struder L, Kemmer J, Lechner P, Fries O, |
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