Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors
WU Guang-Guo1, LI Hong-Ri1, LIANG Kun1, YANG Ru1, CAO Xue-Lei2, WANG Huan-Yu2, AN Jun-Ming3, HU Xiong-Wei3, HAN De-Jun1
1The Key Laboratory of Beam Technology and Materials Modification of the Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 1008752Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 1000493Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors
WU Guang-Guo1, LI Hong-Ri1, LIANG Kun1, YANG Ru1, CAO Xue-Lei2, WANG Huan-Yu2, AN Jun-Ming3, HU Xiong-Wei3, HAN De-Jun1
1The Key Laboratory of Beam Technology and Materials Modification of the Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 1008752Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 1000493Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
摘要Anode floating voltage is predicted and investigated for silicon drift detectors (SDDs) with an active area of 5mm2 fabricated by a double-side parallel technology. It is demonstrated that the anode floating voltage increases with the increasing inner ring voltage, and is almost unchanged with the external ring voltage. The anode floating voltage will not be affected by the back electrode biased voltage until it reaches the full-depleted voltage (-50V) of the SDD. Theoretical analysis and experimental results show that the anode floating voltage is equal to the sum of the inner ring voltage and the built-in potential between the p+ inner ring and the n+ anode. A fast checking method before detector encapsulation is proposed by employing the anode floating voltage along with checking the leakage current, potential distribution and drift properties.
Abstract：Anode floating voltage is predicted and investigated for silicon drift detectors (SDDs) with an active area of 5mm2 fabricated by a double-side parallel technology. It is demonstrated that the anode floating voltage increases with the increasing inner ring voltage, and is almost unchanged with the external ring voltage. The anode floating voltage will not be affected by the back electrode biased voltage until it reaches the full-depleted voltage (-50V) of the SDD. Theoretical analysis and experimental results show that the anode floating voltage is equal to the sum of the inner ring voltage and the built-in potential between the p+ inner ring and the n+ anode. A fast checking method before detector encapsulation is proposed by employing the anode floating voltage along with checking the leakage current, potential distribution and drift properties.
WU Guang-Guo;LI Hong-Ri;LIANG Kun;YANG Ru;CAO Xue-Lei;WANGHuan-Yu;AN Jun-Ming;HU Xiong-Wei;HAN De-Jun. Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors[J]. 中国物理快报, 2009, 26(4): 42901-042901.
WU Guang-Guo, LI Hong-Ri, LIANG Kun, YANG Ru, CAO Xue-Lei, WANGHuan-Yu, AN Jun-Ming, HU Xiong-Wei, HAN De-Jun. Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors. Chin. Phys. Lett., 2009, 26(4): 42901-042901.
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2009, Vol. 26 
