2009, Vol. 26(7): 77301-077301 DOI: 10.1088/0256-307X/26/7/077301 | ||
Field-Effect Transistor Based on Si with LaAlO3-δ as the Source and Drain | ||
YANG Fang, JIN Kui-Juan, LU Hui-Bin, HE Meng, YANG Guo-Zhen | ||
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 | ||
收稿日期 2009-02-08 修回日期 1900-01-01 | ||
Supporting info | ||
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