| 2009, Vol. 26(8): 86803-086803 DOI: 10.1088/0256-307X/26/8/086803 | ||
| Fabrication of 11-nm-Wide Silica-Like Lines Using X-Ray Diffraction Exposure | ||
| ZHU Xiao-Li1,2, XIE Chang-Qing2, ZHANG Man-Hong2, LIU Ming2, CHEN Bao-Qin2, PAN Feng1 | ||
| 1Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 1000842Key Laboratory of Nano-fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 | ||
| 收稿日期 2009-03-04 修回日期 1900-01-01 | ||
| Supporting info | ||
[1] Gu J, Xiao X Y, Takulapalli B R, Morrison M E, Zhang P M [2] Zhu X L, Liu S B, Chen T, Jiang Y J and Zuo T C 2005 [3] Pan F, Song C, Liu X J, Yang Y C and Zeng F 2008 [4] Zhang Y, Shan X D, Liao Z M, Zhao Q, Xu J and Yu D P 2008 [5] Ponawala A and Milanfar P 2007 Microelectron. Engin. [6] Benschop J, Banine V, Lok S and Loopstra E 2008 J. [7] Girolamo J D, Chouiki M, Tortai J H, Sourd C, Derrough S, [8] Cheng H K, Shew B Y and Hsu S C 2007 Opt. Engin. [9] Altissimoa M, Romanato F, Vaccaria L, Businaroa L, Cojoca [10] Bourdillon A J, Boothroyd C B, Williams G P and [11] Chen Y, Rousseaux F, Haghiri-Gosnet A M, Kupka R K, Ravet |
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