2010, Vol. 27(3): 38503-038503    DOI: 10.1088/0256-307X/27/3/038503
	Effect of Interface Nanotexture on Light Extraction of InGaN-Based Green Light Emitting Diodes
	PAN Yao-Bo1,2, HAO Mao-Sheng3, QI Sheng-Li1, FANG Hao1, ZHANG Guo-Yi1
	1School of Physics and State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, Beijing 100871 2Epilight Technology Co., Ltd., Shanghai 201210 3Technology Center for IRICO Group Corporation, Beijing 100085
	收稿日期 2009-11-13  修回日期 1900-01-01
	Supporting info
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